High Quality Tdd Lte 1800MHz 16W RF Power Amplifier

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    2017-12-20 18:33

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Company Profile

Wuhan Gewei Electronic Technologies Co., Ltd.

By certification [File Integrity]

Contact:Ms. Catherina Zhang(Mr.)  






Website: http://geweimarket.china-unison.com/

Product details

High Quality TDD LTE 1800MHz 16W RF Power Amplifier

1. Basic information:

Wuhan Gewei Electronic Technologies provides cost effective Radio Frequency Power Amplifier solution. From 2003 to 2016, we have developed more than 350 macro-BTS RF power amplifier projects and delivered more than 3 million PA channels to our customers. Most of our modules are ZTE and ALU proven and operate in the most stringent environments on earth. With good quality and best price, our products have been supplied a world round communication operators and gain good fame.
2. Product Description:

The RF power amplifier includes class AB PA, high efficiency Doherty PA, feed forward PA; the band range from 0.2-3.5GHz as well as the multi-frequency band. They are mainly used for Macro-BTS, small cell and indoor & outdoor wireless network enhancement.

We employ different technologies to manufacture these modules include GaN, LDMOS, GaAs and other device types to satisfy customer or internal requirements. We use discrete devices, bare die and MMIC based parts for these modules. Gewei manufactures broadband, linear, high power pulsed and very high efficiency amplifiers employed in systems such as communication , electronic test and measurements or any other application that requires high power in a small, rugged enclosure. Please view the commercial products displayed and contact us with any customized requirements you may have.  

3. Features:

Our power amplifier products have outstanding features of high efficiency, Small size and high reliability. They have been widely used in global mobile communication networks. The product cover all operating frequency bands from 200MHz to 3500MHz with a wide range of output power level from 2W to 250W, and support all the technologies including GSM, CDMA, WCDMA,TD-SCDMA,FDD-LTE AND TDD-LTE. The products support multi-carrier RF channel architectures with a maximum channel number up to 8 (8TX+8RX).
Support Alarm Function:
1) Over temperature alarm
2) Output RF port VSWR alarm
3) Overdrive alarm
4) PA Gain failure alarm
5) LNA failure alarm
6) PA component failure alarm
Support control and detection function:

1) Input and output power detection
2) The adjustment range of the output power is 50dB with an adjustment accuracy of 0.5Db
3) The PA firmware can be remotely updated online
4) The output power accuracy : ±0.3Db in a 30dB dynamic output power
5) The temperature detection accuracy : ±1ºC
6) PA power consumption detection function
7) High reliability- the MTBF of the RF module : higher than 250000 hours

 Support data real-time report function

4. Application:

The basic applications of the RF power amplifier include driving to another high power source, driving a transmitting antenna and exciting microwave cavity resonators.
5. Specification:
Frequency Band Standard Channel
2535~2675MHz TDD 8T8R 20W
2110~2170MHz FDD 1T 75W
2110~2170MHz FDD 2T 75W
1880~2025MHz TDD 8T8R 16W
1880~2025MHz/2320~2370MHz TDD 2T2R 25W/50W
1785~1805MHz TDD 4T4R 16W
1830~1875MHz FDD 2T 85W
2500~2640MHz TDD 8T8R 20W
566~678MHz TDD 1T1R 2W
606~678MHz TDD 4T4R 40W
1447~1467MHz TDD 2T2R 50W
1785~1805MHz TDD 2T2R 50W
606~678MHz TDD 1T2R 30W
606~678MHz TDD 1T1R 4W
606~678MHz TDD 1T1R 30W
400~430MHz TDD 1T1R 4W
606~678MHz TDD 2T2R 30W
400~430MHz TDD 2T2R 30W
606~678MHz TDD 2T2R 40W
566~678MHz TDD 1T1R 4W
1805~1880MHz FDD 2T2R 80W
2110~2170MHz FDD 2T2R 80W
2496~2690MHz TDD 4T4R 20W
1885~1915MHz TDD 4T4R 20W
1845~1875MHz/1750~1780MHz FDD 1T1R 20W
450~470MHz TDD 2T2R 40W
2535~2705MHz TDD 2T2R 50W
2535~2675MHz TDD 2T2R 20W
400~430MHz TDD 2T3R 13W
330~350MHz TDD 4T4R 13W
606~678MHz TDD 1T1R 20W